High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects

High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects

10.1063/1.3624459

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Bibliographic Details
Main Authors: Liang, G., Bala Kumar, S., Jalil, M.B.A., Tan, S.G.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56188
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/56188

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