High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects

10.1063/1.3624459

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Main Authors:	Liang, G., Bala Kumar, S., Jalil, M.B.A., Tan, S.G.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56188
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-561882023-10-25T21:35:37Z High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects Liang, G. Bala Kumar, S. Jalil, M.B.A. Tan, S.G. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.3624459 Applied Physics Letters 99 8 - APPLA 2014-06-17T02:51:43Z 2014-06-17T02:51:43Z 2011-08-22 Article Liang, G., Bala Kumar, S., Jalil, M.B.A., Tan, S.G. (2011-08-22). High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects. Applied Physics Letters 99 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3624459 00036951 http://scholarbank.nus.edu.sg/handle/10635/56188 000294359100064 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.3624459
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liang, G. Bala Kumar, S. Jalil, M.B.A. Tan, S.G.
format	Article
author	Liang, G. Bala Kumar, S. Jalil, M.B.A. Tan, S.G.
spellingShingle	Liang, G. Bala Kumar, S. Jalil, M.B.A. Tan, S.G. High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects
author_sort	Liang, G.
title	High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects
title_short	High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects
title_full	High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects
title_fullStr	High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects
title_full_unstemmed	High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects
title_sort	high magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/56188
_version_	1781781124205248512

High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects

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