Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons
A MRAM device is fabricated using magnetic graphene oxide- iron oxide nanoparticles nanocomposites together with a platinum electrode and a ferromagnetic cobalt electrode. The device allow for a positive magnetoresistance up to 280% via the spin-dependent trapping of charge carriers. Its low resista...
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sg-ntu-dr.10356-1016772020-03-07T12:34:53Z Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons Lin, Aigu L. Peng, Haiyang Liu, Zhiqi Wu, Tom Su, Chenliang Loh, Kian Ping Ariando Chen, Wei Wee, Andrew T. S. School of Physical and Mathematical Sciences DRNTU::Science::Chemistry A MRAM device is fabricated using magnetic graphene oxide- iron oxide nanoparticles nanocomposites together with a platinum electrode and a ferromagnetic cobalt electrode. The device allow for a positive magnetoresistance up to 280% via the spin-dependent trapping of charge carriers. Its low resistance state can be restored by releasing the trapped charges by reversing the direction of current flow together with the magnetic field orientation. 2014-06-13T04:17:47Z 2019-12-06T20:42:39Z 2014-06-13T04:17:47Z 2019-12-06T20:42:39Z 2014 2014 Journal Article Lin, A. L., Peng, H., Liu, Z., Wu, T., Su, C., Loh, K. P., et al. (2014). Room Temperature Magnetic Graphene Oxide- Iron Oxide Nanocomposite Based Magnetoresistive Random Access Memory Devices via Spin-Dependent Trapping of Electrons. Small, 10(10), 1945–1952. 1613-6810 https://hdl.handle.net/10356/101677 http://hdl.handle.net/10220/19751 10.1002/smll.201302986 en Small © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
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DRNTU::Science::Chemistry Lin, Aigu L. Peng, Haiyang Liu, Zhiqi Wu, Tom Su, Chenliang Loh, Kian Ping Ariando Chen, Wei Wee, Andrew T. S. Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons |
| description |
A MRAM device is fabricated using magnetic graphene oxide- iron oxide nanoparticles nanocomposites together with a platinum electrode and a ferromagnetic cobalt electrode. The device allow for a positive magnetoresistance up to 280% via the spin-dependent trapping of charge carriers. Its low resistance state can be restored by releasing the trapped charges by reversing the direction of current flow together with the magnetic field orientation. |
| author2 |
School of Physical and Mathematical Sciences |
| author_facet |
School of Physical and Mathematical Sciences Lin, Aigu L. Peng, Haiyang Liu, Zhiqi Wu, Tom Su, Chenliang Loh, Kian Ping Ariando Chen, Wei Wee, Andrew T. S. |
| format |
Article |
| author |
Lin, Aigu L. Peng, Haiyang Liu, Zhiqi Wu, Tom Su, Chenliang Loh, Kian Ping Ariando Chen, Wei Wee, Andrew T. S. |
| author_sort |
Lin, Aigu L. |
| title |
Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons |
| title_short |
Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons |
| title_full |
Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons |
| title_fullStr |
Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons |
| title_full_unstemmed |
Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons |
| title_sort |
room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons |
| publishDate |
2014 |
| url |
https://hdl.handle.net/10356/101677 http://hdl.handle.net/10220/19751 |
| _version_ |
1681041033385738240 |