Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect

• المؤلفون الرئيسيون: Gao, Bin, Yu, Hongyu, Lu, Y., Chen, B., Fang, Z., Fu, Y. H., Yang, J. Q., Liu, L. F., Liu, X. Y., Kang, J. F.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/102380; http://hdl.handle.net/10220/16380

We report that the endurance degradation behaviors of transitional metal oxide (TMO) based resistive random access memory (RRAM) is dominated by three different steps and correlated with extra oxygen vacancy accumulation during SET/RESET switching process. The physical origin of endurance degradatio...