A 5-Gb/s automatic gain control amplifier with temperature compensation

This paper presents an automatic gain control (AGC) amplifier with temperature compensation for high-speed applications. The proposed AGC consists of a folded Gilbert variable gain amplifier (VGA), a dc offset canceller, inductorless post amplifiers, a linear open-loop peak detector (PD), an integra...

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Main Authors: Liu, Chang, Yan, Yuepeng, Goh, Wang Ling, Xiong, Yong-Zhong, Zhang, Lijun, Madihian, Mohammad
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/102388
http://hdl.handle.net/10220/16397
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1023882020-03-07T14:00:33Z A 5-Gb/s automatic gain control amplifier with temperature compensation Liu, Chang Yan, Yuepeng Goh, Wang Ling Xiong, Yong-Zhong Zhang, Lijun Madihian, Mohammad School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering This paper presents an automatic gain control (AGC) amplifier with temperature compensation for high-speed applications. The proposed AGC consists of a folded Gilbert variable gain amplifier (VGA), a dc offset canceller, inductorless post amplifiers, a linear open-loop peak detector (PD), an integrator, a symmetrical exponential voltage generator, and a compensation block for temperature stability. The novel temperature compensation scheme ensures the AGC stability and accuracy over -20°C-200°C by predicting the integrator biasing voltage based on the crucial blocks duplication technique. The proposed linear open loop PD combined with the linear-in-dB VGA manages the dB-linear error of less than 0.3 dB for the received signal strength indication (RSSI). The AGC chip is fabricated using a 0.13-μm SiGe BiCMOS technology. Consuming a power of 72 mW from a 1.2-V supply voltage, the fabricated circuit exhibits a voltage gain of 40 dB and a 3-dB bandwidth of 7.5 GHz. With a 215 - 1 pseudo-random bit sequence at 5-Gb/s, the measured peak-to-peak jitter is less than 40pspp across the -20°C-200°C temperature range. The low linear-in-dB error and the wide operating temperature range achieving the high-speed data input signal indicate the suitability of the proposed techniques for high-speed AGC amplifiers. 2013-10-10T06:26:32Z 2019-12-06T20:54:12Z 2013-10-10T06:26:32Z 2019-12-06T20:54:12Z 2012 2012 Journal Article Liu, C., Yan, Y. P., Goh, W. L., Xiong, Y. Z., Zhang, L. J., & Madihian, M. (2012). A 5-Gb/s automatic gain control amplifier with temperature compensation. IEEE journal of solid-state circuits, 47(6), 1323-1333. https://hdl.handle.net/10356/102388 http://hdl.handle.net/10220/16397 10.1109/JSSC.2012.2192660 en IEEE journal of solid-state circuits
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Liu, Chang
Yan, Yuepeng
Goh, Wang Ling
Xiong, Yong-Zhong
Zhang, Lijun
Madihian, Mohammad
A 5-Gb/s automatic gain control amplifier with temperature compensation
description This paper presents an automatic gain control (AGC) amplifier with temperature compensation for high-speed applications. The proposed AGC consists of a folded Gilbert variable gain amplifier (VGA), a dc offset canceller, inductorless post amplifiers, a linear open-loop peak detector (PD), an integrator, a symmetrical exponential voltage generator, and a compensation block for temperature stability. The novel temperature compensation scheme ensures the AGC stability and accuracy over -20°C-200°C by predicting the integrator biasing voltage based on the crucial blocks duplication technique. The proposed linear open loop PD combined with the linear-in-dB VGA manages the dB-linear error of less than 0.3 dB for the received signal strength indication (RSSI). The AGC chip is fabricated using a 0.13-μm SiGe BiCMOS technology. Consuming a power of 72 mW from a 1.2-V supply voltage, the fabricated circuit exhibits a voltage gain of 40 dB and a 3-dB bandwidth of 7.5 GHz. With a 215 - 1 pseudo-random bit sequence at 5-Gb/s, the measured peak-to-peak jitter is less than 40pspp across the -20°C-200°C temperature range. The low linear-in-dB error and the wide operating temperature range achieving the high-speed data input signal indicate the suitability of the proposed techniques for high-speed AGC amplifiers.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Liu, Chang
Yan, Yuepeng
Goh, Wang Ling
Xiong, Yong-Zhong
Zhang, Lijun
Madihian, Mohammad
format Article
author Liu, Chang
Yan, Yuepeng
Goh, Wang Ling
Xiong, Yong-Zhong
Zhang, Lijun
Madihian, Mohammad
author_sort Liu, Chang
title A 5-Gb/s automatic gain control amplifier with temperature compensation
title_short A 5-Gb/s automatic gain control amplifier with temperature compensation
title_full A 5-Gb/s automatic gain control amplifier with temperature compensation
title_fullStr A 5-Gb/s automatic gain control amplifier with temperature compensation
title_full_unstemmed A 5-Gb/s automatic gain control amplifier with temperature compensation
title_sort 5-gb/s automatic gain control amplifier with temperature compensation
publishDate 2013
url https://hdl.handle.net/10356/102388
http://hdl.handle.net/10220/16397
_version_ 1681033920295993344