A D-band cascode amplifier with 24.3 dB gain and 7.7 dBm output power in 0.13 μm SiGe BiCMOS technology

A D-band cascode amplifier with 24.3 dB gain and 7.7 dBm output power in 0.13 μm SiGe BiCMOS technology

This letter describes a D-band 3-stage cascode amplifier developed using the IHP 0.13 μm SiGe BiCMOS technology. The amplifier is implemented with low-loss transformer for inter-stage matching and single-to-differential transformation. The large-signal characteristics of the cascode HBT configuratio...

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Bibliographic Details
Main Authors: Hou, Debin, Xiong, Yong-Zhong, Goh, Wang Ling, Hong, Wei, Madihian, Mohammad
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/102738
http://hdl.handle.net/10220/16411
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/102738
http://hdl.handle.net/10220/16411

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