A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS

A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS

IEEE Microwave and Wireless Components Letters

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Bibliographic Details
Main Authors: Bi, X., Guo, Y., Xiong, Y.Z., Arasu, M.A., Je, M.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Cascode
low noise amplifier (LNA)
q-enhanced
shape-factor (SF)
SiGe BiCMOS
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81837
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/81837

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