A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS
IEEE Microwave and Wireless Components Letters
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sg-nus-scholar.10635-818372024-11-08T17:32:26Z A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS Bi, X. Guo, Y. Xiong, Y.Z. Arasu, M.A. Je, M. ELECTRICAL & COMPUTER ENGINEERING Cascode low noise amplifier (LNA) q-enhanced shape-factor (SF) SiGe BiCMOS IEEE Microwave and Wireless Components Letters 23 5 261-263 IMWCB 2014-10-07T04:22:17Z 2014-10-07T04:22:17Z 2013 Article Bi, X., Guo, Y., Xiong, Y.Z., Arasu, M.A., Je, M. (2013). A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS. IEEE Microwave and Wireless Components Letters 23 (5) : 261-263. ScholarBank@NUS Repository. 15311309 http://scholarbank.nus.edu.sg/handle/10635/81837 000319004000013 Scopus |
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Cascode low noise amplifier (LNA) q-enhanced shape-factor (SF) SiGe BiCMOS |
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Cascode low noise amplifier (LNA) q-enhanced shape-factor (SF) SiGe BiCMOS Bi, X. Guo, Y. Xiong, Y.Z. Arasu, M.A. Je, M. A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS |
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IEEE Microwave and Wireless Components Letters |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Bi, X. Guo, Y. Xiong, Y.Z. Arasu, M.A. Je, M. |
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Bi, X. Guo, Y. Xiong, Y.Z. Arasu, M.A. Je, M. |
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Bi, X. |
title |
A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS |
title_short |
A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS |
title_full |
A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS |
title_fullStr |
A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS |
title_full_unstemmed |
A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS |
title_sort |
19.2 > 45 db gain and high-selectivity 94 ghz lna in 0.13 μm sige bicmos |
publishDate |
2014 |
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http://scholarbank.nus.edu.sg/handle/10635/81837 |
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