A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS

IEEE Microwave and Wireless Components Letters

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Main Authors: Bi, X., Guo, Y., Xiong, Y.Z., Arasu, M.A., Je, M.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/81837
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spelling sg-nus-scholar.10635-818372024-11-08T17:32:26Z A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS Bi, X. Guo, Y. Xiong, Y.Z. Arasu, M.A. Je, M. ELECTRICAL & COMPUTER ENGINEERING Cascode low noise amplifier (LNA) q-enhanced shape-factor (SF) SiGe BiCMOS IEEE Microwave and Wireless Components Letters 23 5 261-263 IMWCB 2014-10-07T04:22:17Z 2014-10-07T04:22:17Z 2013 Article Bi, X., Guo, Y., Xiong, Y.Z., Arasu, M.A., Je, M. (2013). A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS. IEEE Microwave and Wireless Components Letters 23 (5) : 261-263. ScholarBank@NUS Repository. 15311309 http://scholarbank.nus.edu.sg/handle/10635/81837 000319004000013 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Cascode
low noise amplifier (LNA)
q-enhanced
shape-factor (SF)
SiGe BiCMOS
spellingShingle Cascode
low noise amplifier (LNA)
q-enhanced
shape-factor (SF)
SiGe BiCMOS
Bi, X.
Guo, Y.
Xiong, Y.Z.
Arasu, M.A.
Je, M.
A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS
description IEEE Microwave and Wireless Components Letters
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Bi, X.
Guo, Y.
Xiong, Y.Z.
Arasu, M.A.
Je, M.
format Article
author Bi, X.
Guo, Y.
Xiong, Y.Z.
Arasu, M.A.
Je, M.
author_sort Bi, X.
title A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS
title_short A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS
title_full A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS
title_fullStr A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS
title_full_unstemmed A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS
title_sort 19.2 > 45 db gain and high-selectivity 94 ghz lna in 0.13 μm sige bicmos
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/81837
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