A D-band cascode amplifier with 24.3 dB gain and 7.7 dBm output power in 0.13 μm SiGe BiCMOS technology
This letter describes a D-band 3-stage cascode amplifier developed using the IHP 0.13 μm SiGe BiCMOS technology. The amplifier is implemented with low-loss transformer for inter-stage matching and single-to-differential transformation. The large-signal characteristics of the cascode HBT configuratio...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/102738 http://hdl.handle.net/10220/16411 |
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| Institution: | Nanyang Technological University |
| Language: | English |