Al content-dependent resistive switching in Al-rich AlOxNy thin films

Al content-dependent resistive switching in Al-rich AlOxNy thin films

Resistive switching can occur in Al-rich AlO x N y thin films depending on the Al content, i.e., the films with a small Al content exhibit resistive switching, but no resistive switch is observed in the films with a large Al content. The forming voltage, set/reset voltages, currents at the low- and...

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Main Authors: Zhu, W., Chen, T. P., Liu, Y., Liu, Z.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2015
Subjects:
DRNTU::Engineering::Materials::Nanostructured materials
DRNTU::Engineering::Nanotechnology
Online Access:https://hdl.handle.net/10356/103949
http://hdl.handle.net/10220/24647
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1039492020-03-07T14:00:35Z Al content-dependent resistive switching in Al-rich AlOxNy thin films Zhu, W. Chen, T. P. Liu, Y. Liu, Z. School of Electrical and Electronic Engineering DRNTU::Engineering::Materials::Nanostructured materials DRNTU::Engineering::Nanotechnology Resistive switching can occur in Al-rich AlO x N y thin films depending on the Al content, i.e., the films with a small Al content exhibit resistive switching, but no resistive switch is observed in the films with a large Al content. The forming voltage, set/reset voltages, currents at the low- and high-resistance states, and conduction behavior of the low-resistance state are found to be dependent of the Al content. The phenomena can be explained by the changes in the complete filaments that consist of the metallic filaments formed by Al nanophases and the non-metallic filaments formed by oxygen vacancies. 2015-01-16T02:24:24Z 2019-12-06T21:23:29Z 2015-01-16T02:24:24Z 2019-12-06T21:23:29Z 2014 2014 Journal Article Zhu, W., Chen, T. P., Liu, Y., & Liu, Z. (2014). Al content-dependent resistive switching in Al-rich AlOxNy thin films. Nanoscience and nanotechnology letters, 6(9), 835-839. https://hdl.handle.net/10356/103949 http://hdl.handle.net/10220/24647 10.1166/nnl.2014.1862 en Nanoscience and nanotechnology letters © 2014 American Scientific Publishers.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Nanostructured materials
DRNTU::Engineering::Nanotechnology
spellingShingle DRNTU::Engineering::Materials::Nanostructured materials
DRNTU::Engineering::Nanotechnology
Zhu, W.
Chen, T. P.
Liu, Y.
Liu, Z.
Al content-dependent resistive switching in Al-rich AlOxNy thin films
description Resistive switching can occur in Al-rich AlO x N y thin films depending on the Al content, i.e., the films with a small Al content exhibit resistive switching, but no resistive switch is observed in the films with a large Al content. The forming voltage, set/reset voltages, currents at the low- and high-resistance states, and conduction behavior of the low-resistance state are found to be dependent of the Al content. The phenomena can be explained by the changes in the complete filaments that consist of the metallic filaments formed by Al nanophases and the non-metallic filaments formed by oxygen vacancies.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Zhu, W.
Chen, T. P.
Liu, Y.
Liu, Z.
format Article
author Zhu, W.
Chen, T. P.
Liu, Y.
Liu, Z.
author_sort Zhu, W.
title Al content-dependent resistive switching in Al-rich AlOxNy thin films
title_short Al content-dependent resistive switching in Al-rich AlOxNy thin films
title_full Al content-dependent resistive switching in Al-rich AlOxNy thin films
title_fullStr Al content-dependent resistive switching in Al-rich AlOxNy thin films
title_full_unstemmed Al content-dependent resistive switching in Al-rich AlOxNy thin films
title_sort al content-dependent resistive switching in al-rich aloxny thin films
publishDate 2015
url https://hdl.handle.net/10356/103949
http://hdl.handle.net/10220/24647
_version_ 1681043784955068416

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