Al content-dependent resistive switching in Al-rich AlOxNy thin films

• المؤلفون الرئيسيون: Zhu, W., Chen, T. P., Liu, Y., Liu, Z.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Engineering::Materials::Nanostructured materials; DRNTU::Engineering::Nanotechnology
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/103949; http://hdl.handle.net/10220/24647
• المؤسسة: Nanyang Technological University

Resistive switching can occur in Al-rich AlO x N y thin films depending on the Al content, i.e., the films with a small Al content exhibit resistive switching, but no resistive switch is observed in the films with a large Al content. The forming voltage, set/reset voltages, currents at the low- and...