Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes

• Main Authors: Ji, Yun, Liu, Wei, Erdem, Talha, Chen, Rui, Tan, Swee Tiam, Zhang, Zi-Hui, Ju, Zhengang, Zhang, Xueliang, Sun, Handong, Sun, Xiao Wei, Zhao, Yuji, DenBaars, Steven P., Nakamura, Shuji, Volkan Demir, Hilmi
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: https://hdl.handle.net/10356/104110; http://hdl.handle.net/10220/19530
• Institution: Nanyang Technological University

The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (112¯ 2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-reso...