Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes

The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (112¯ 2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-reso...

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Bibliographic Details
Main Authors: Ji, Yun, Liu, Wei, Erdem, Talha, Chen, Rui, Tan, Swee Tiam, Zhang, Zi-Hui, Ju, Zhengang, Zhang, Xueliang, Sun, Handong, Sun, Xiao Wei, Zhao, Yuji, DenBaars, Steven P., Nakamura, Shuji, Volkan Demir, Hilmi
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2014
Subjects:
Online Access:https://hdl.handle.net/10356/104110
http://hdl.handle.net/10220/19530
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Institution: Nanyang Technological University
Language: English
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Summary:The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (112¯ 2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates.