InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature

• المؤلفون الرئيسيون: Tobing, Landobasa Yosef Mario, Tong, Jinchao, Qian, Li, Suo, Fei, Zhang, Dao Hua
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: GaSb; Engineering::Electrical and electronic engineering; Room Temperature
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/104246; http://hdl.handle.net/10220/50221

We present the design, fabrication, and characterization of middle-wavelength infrared photodetector based on active InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb substrate. In this structure, the active absorption layer is sandwiched between thin quaternary p-type and n-type AlInAsSb laye...