Room temperature plasmon-enhanced InAs0.91Sb0.09-based heterojunction n-i-p mid-wave infrared photodetector

• Main Authors: Tobing, Landobasa Yosef Mario, Tong, Jinchao, Qiu, Shupeng, Zhang, Dao Hua, Unil Perera, A. G.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Photodetectors; Middle Wavelength Infrared; DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/88527; http://hdl.handle.net/10220/47609
• Institution: Nanyang Technological University

Middle wavelength infrared (MWIR) photodetectors have a wide range of applications, but almost all of them operate at low temperature due to the limit of materials and device structures. The capability of plasmonic structures to localize electromagnetic wave on the deep subwavelength scale provides...