A novel 2.6–6.4 GHz highly integrated broadband GaN power amplifier

• المؤلفون الرئيسيون: Liu, Bei, Mao, Mengda, Khanna, Devrishi, Boon, Chirn-Chye, Choi, Pilsoon, Fitzgerald, Eugene A.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: Engineering::Electrical and electronic engineering; Gallium Nitride; Broadband
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/104484; http://hdl.handle.net/10220/50016
• المؤسسة: Nanyang Technological University

In this letter, a novel methodology to achieve output broadband matching is proposed. Based on this methodology, a broadband gallium nitride power amplifier (PA) with input matching and stabilization circuit integrated on-chip is designed. The implemented PA achieves a maximum drain efficiency of 62...