Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers

InGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization induced electric field in the quantum wells, which is a fundamental problem intrinsic to the III-nitrides. Here, we show that...

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Main Authors: Zhang, Zi-Hui, Liu, Wei, Ju, Zhengang, Tiam Tan, Swee, Ji, Yun, Kyaw, Zabu, Zhang, Xueliang, Wang, Liancheng, Wei Sun, Xiao, Volkan Demir, Hilmi
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2014
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Online Access:https://hdl.handle.net/10356/104767
http://hdl.handle.net/10220/20274
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1047672023-02-28T19:42:19Z Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers Zhang, Zi-Hui Liu, Wei Ju, Zhengang Tiam Tan, Swee Ji, Yun Kyaw, Zabu Zhang, Xueliang Wang, Liancheng Wei Sun, Xiao Volkan Demir, Hilmi School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics InGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization induced electric field in the quantum wells, which is a fundamental problem intrinsic to the III-nitrides. Here, we show that the QCSE is self-screened by the polarization induced bulk charges enabled by designing quantum barriers. The InN composition of the InGaN quantum barrier graded along the growth orientation opportunely generates the polarization induced bulk charges in the quantum barrier, which well compensate the polarization induced interface charges, thus avoiding the electric field in the quantum wells. Consequently, the optical output power and the external quantum efficiency are substantially improved for the LEDs. The ability to self-screen the QCSE using polarization induced bulk charges opens up new possibilities for device engineering of III-nitrides not only in LEDs but also in other optoelectronic devices. ASTAR (Agency for Sci., Tech. and Research, S’pore) Published version 2014-08-14T04:51:08Z 2019-12-06T21:39:16Z 2014-08-14T04:51:08Z 2019-12-06T21:39:16Z 2014 2014 Journal Article Zhang, Z.-H., Liu, W., Ju, Z., Tiam Tan, S., Ji, Y., Kyaw, Z., et al. (2014). Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers. Applied Physics Letters, 104(24), 243501-. 0003-6951 https://hdl.handle.net/10356/104767 http://hdl.handle.net/10220/20274 10.1063/1.4883894 en Applied physics letters © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.4883894.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Zhang, Zi-Hui
Liu, Wei
Ju, Zhengang
Tiam Tan, Swee
Ji, Yun
Kyaw, Zabu
Zhang, Xueliang
Wang, Liancheng
Wei Sun, Xiao
Volkan Demir, Hilmi
Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers
description InGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization induced electric field in the quantum wells, which is a fundamental problem intrinsic to the III-nitrides. Here, we show that the QCSE is self-screened by the polarization induced bulk charges enabled by designing quantum barriers. The InN composition of the InGaN quantum barrier graded along the growth orientation opportunely generates the polarization induced bulk charges in the quantum barrier, which well compensate the polarization induced interface charges, thus avoiding the electric field in the quantum wells. Consequently, the optical output power and the external quantum efficiency are substantially improved for the LEDs. The ability to self-screen the QCSE using polarization induced bulk charges opens up new possibilities for device engineering of III-nitrides not only in LEDs but also in other optoelectronic devices.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Zhang, Zi-Hui
Liu, Wei
Ju, Zhengang
Tiam Tan, Swee
Ji, Yun
Kyaw, Zabu
Zhang, Xueliang
Wang, Liancheng
Wei Sun, Xiao
Volkan Demir, Hilmi
format Article
author Zhang, Zi-Hui
Liu, Wei
Ju, Zhengang
Tiam Tan, Swee
Ji, Yun
Kyaw, Zabu
Zhang, Xueliang
Wang, Liancheng
Wei Sun, Xiao
Volkan Demir, Hilmi
author_sort Zhang, Zi-Hui
title Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers
title_short Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers
title_full Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers
title_fullStr Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers
title_full_unstemmed Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers
title_sort self-screening of the quantum confined stark effect by the polarization induced bulk charges in the quantum barriers
publishDate 2014
url https://hdl.handle.net/10356/104767
http://hdl.handle.net/10220/20274
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