Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers

• Main Authors: Zhang, Zi-Hui, Liu, Wei, Ju, Zhengang, Tiam Tan, Swee, Ji, Yun, Kyaw, Zabu, Zhang, Xueliang, Wang, Liancheng, Wei Sun, Xiao, Volkan Demir, Hilmi
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: https://hdl.handle.net/10356/104767; http://hdl.handle.net/10220/20274
• Institution: Nanyang Technological University

InGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization induced electric field in the quantum wells, which is a fundamental problem intrinsic to the III-nitrides. Here, we show that...