Germanium p-i-n avalanche photodetector fabricated by point defect healing process

• Main Authors: Baek, Jung Woo, Kim, Gwang Sik, Yu, Hyun-Yong, Park, Jin-Hong, Shim, Jae Woo, Kang, Dong-Ho, Yoo, Gwangwe, Hong, Seong-Taek, Jung, Woo-Shik, Kuh, Bong Jin, Lee, Beomsuk, Shin, Dongjae, Ha, Kyoungho
• Other Authors: School of Mechanical and Aerospace Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Mechanical engineering::Control engineering
• Online Access: https://hdl.handle.net/10356/104840; http://hdl.handle.net/10220/20317
• Institution: Nanyang Technological University

In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below VR=5 V), low operating voltage (avalanche breakdown voltage=8–13 V), and high multiplication gain (440–680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ∼1017 cm−3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.