Germanium p-i-n avalanche photodetector fabricated by point defect healing process

In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below VR=5  V), low operating voltage (avalanche breakdown voltage=8–13  V), and high multiplication gain (440–680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing t...

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Main Authors: Baek, Jung Woo, Kim, Gwang Sik, Yu, Hyun-Yong, Park, Jin-Hong, Shim, Jae Woo, Kang, Dong-Ho, Yoo, Gwangwe, Hong, Seong-Taek, Jung, Woo-Shik, Kuh, Bong Jin, Lee, Beomsuk, Shin, Dongjae, Ha, Kyoungho
Other Authors: School of Mechanical and Aerospace Engineering
Format: Article
Language:English
Published: 2014
Subjects:
Online Access:https://hdl.handle.net/10356/104840
http://hdl.handle.net/10220/20317
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1048402023-03-04T17:20:13Z Germanium p-i-n avalanche photodetector fabricated by point defect healing process Baek, Jung Woo Kim, Gwang Sik Yu, Hyun-Yong Park, Jin-Hong Shim, Jae Woo Kang, Dong-Ho Yoo, Gwangwe Hong, Seong-Taek Jung, Woo-Shik Kuh, Bong Jin Lee, Beomsuk Shin, Dongjae Ha, Kyoungho School of Mechanical and Aerospace Engineering DRNTU::Engineering::Mechanical engineering::Control engineering In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below VR=5  V), low operating voltage (avalanche breakdown voltage=8–13  V), and high multiplication gain (440–680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ∼1017  cm−3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications. Published version 2014-08-18T02:30:44Z 2019-12-06T21:40:57Z 2014-08-18T02:30:44Z 2019-12-06T21:40:57Z 2014 2014 Journal Article Shim, J., Kang, D. H., Yoo, G., Hong, S. T., Jung, W. S., Kuh, B. J., et al. (2014). Germanium p-i-n avalanche photodetector fabricated by point defect healing process. Optics Letters, 39(14), 4204-4207. https://hdl.handle.net/10356/104840 http://hdl.handle.net/10220/20317 10.1364/OL.39.004204 en Optics letters © 2014 Optical Society of America. This paper was published in Optics Letters and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: [http://dx.doi.org/10.1364/OL.39.004204]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Mechanical engineering::Control engineering
spellingShingle DRNTU::Engineering::Mechanical engineering::Control engineering
Baek, Jung Woo
Kim, Gwang Sik
Yu, Hyun-Yong
Park, Jin-Hong
Shim, Jae Woo
Kang, Dong-Ho
Yoo, Gwangwe
Hong, Seong-Taek
Jung, Woo-Shik
Kuh, Bong Jin
Lee, Beomsuk
Shin, Dongjae
Ha, Kyoungho
Germanium p-i-n avalanche photodetector fabricated by point defect healing process
description In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below VR=5  V), low operating voltage (avalanche breakdown voltage=8–13  V), and high multiplication gain (440–680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ∼1017  cm−3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.
author2 School of Mechanical and Aerospace Engineering
author_facet School of Mechanical and Aerospace Engineering
Baek, Jung Woo
Kim, Gwang Sik
Yu, Hyun-Yong
Park, Jin-Hong
Shim, Jae Woo
Kang, Dong-Ho
Yoo, Gwangwe
Hong, Seong-Taek
Jung, Woo-Shik
Kuh, Bong Jin
Lee, Beomsuk
Shin, Dongjae
Ha, Kyoungho
format Article
author Baek, Jung Woo
Kim, Gwang Sik
Yu, Hyun-Yong
Park, Jin-Hong
Shim, Jae Woo
Kang, Dong-Ho
Yoo, Gwangwe
Hong, Seong-Taek
Jung, Woo-Shik
Kuh, Bong Jin
Lee, Beomsuk
Shin, Dongjae
Ha, Kyoungho
author_sort Baek, Jung Woo
title Germanium p-i-n avalanche photodetector fabricated by point defect healing process
title_short Germanium p-i-n avalanche photodetector fabricated by point defect healing process
title_full Germanium p-i-n avalanche photodetector fabricated by point defect healing process
title_fullStr Germanium p-i-n avalanche photodetector fabricated by point defect healing process
title_full_unstemmed Germanium p-i-n avalanche photodetector fabricated by point defect healing process
title_sort germanium p-i-n avalanche photodetector fabricated by point defect healing process
publishDate 2014
url https://hdl.handle.net/10356/104840
http://hdl.handle.net/10220/20317
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