A neural network approach to classify inversion regions of high mobility ultralong channel single walled carbon nanotube field-effect transistors for sensing applications
Millimetre long individual single walled carbon nanotubes (SWCNTs) were consistently grown and fabricated into carbon nanotube field effect transistors (CNTFETs). In this work, we extracted the effective mobilities in the strong inversion region, near-threshold region and subthreshold region respect...
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sg-ntu-dr.10356-1050102019-12-06T21:44:28Z A neural network approach to classify inversion regions of high mobility ultralong channel single walled carbon nanotube field-effect transistors for sensing applications Hari Krishna, S. V. An, Jianing Zheng, Lianxi School of Mechanical and Aerospace Engineering International Nanoelectronics Conference (5th : 2013 : Singapore) Millimetre long individual single walled carbon nanotubes (SWCNTs) were consistently grown and fabricated into carbon nanotube field effect transistors (CNTFETs). In this work, we extracted the effective mobilities in the strong inversion region, near-threshold region and subthreshold region respectively for these long-channel CNTFETs. Using the mobility data as an input parameter, an artificial neural network (ANN) employing multi-layer perceptron (MLP) architecture was used to classify the different inversion regions of the mobility curves with an accuracy of 90%. 2013-10-24T08:13:17Z 2019-12-06T21:44:28Z 2013-10-24T08:13:17Z 2019-12-06T21:44:28Z 2013 2013 Conference Paper Hari Krishna, S. V., An, J., & Zheng, L. (2013).A neural network approach to classify inversion regions of high mobility ultralong channel single walled carbon nanotube field-effect transistors for sensing applications. 2013 IEEE 5th International Nanoelectronics Conference (INEC). https://hdl.handle.net/10356/105010 http://hdl.handle.net/10220/16823 http://dx.doi.org/10.1109/INEC.2013.6465961 en |
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Millimetre long individual single walled carbon nanotubes (SWCNTs) were consistently grown and fabricated into carbon nanotube field effect transistors (CNTFETs). In this work, we extracted the effective mobilities in the strong inversion region, near-threshold region and subthreshold region respectively for these long-channel CNTFETs. Using the mobility data as an input parameter, an artificial neural network (ANN) employing multi-layer perceptron (MLP) architecture was used to classify the different inversion regions of the mobility curves with an accuracy of 90%. |
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School of Mechanical and Aerospace Engineering |
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School of Mechanical and Aerospace Engineering Hari Krishna, S. V. An, Jianing Zheng, Lianxi |
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Hari Krishna, S. V. An, Jianing Zheng, Lianxi |
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Hari Krishna, S. V. An, Jianing Zheng, Lianxi A neural network approach to classify inversion regions of high mobility ultralong channel single walled carbon nanotube field-effect transistors for sensing applications |
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Hari Krishna, S. V. |
title |
A neural network approach to classify inversion regions of high mobility ultralong channel single walled carbon nanotube field-effect transistors for sensing applications |
title_short |
A neural network approach to classify inversion regions of high mobility ultralong channel single walled carbon nanotube field-effect transistors for sensing applications |
title_full |
A neural network approach to classify inversion regions of high mobility ultralong channel single walled carbon nanotube field-effect transistors for sensing applications |
title_fullStr |
A neural network approach to classify inversion regions of high mobility ultralong channel single walled carbon nanotube field-effect transistors for sensing applications |
title_full_unstemmed |
A neural network approach to classify inversion regions of high mobility ultralong channel single walled carbon nanotube field-effect transistors for sensing applications |
title_sort |
neural network approach to classify inversion regions of high mobility ultralong channel single walled carbon nanotube field-effect transistors for sensing applications |
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2013 |
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https://hdl.handle.net/10356/105010 http://hdl.handle.net/10220/16823 http://dx.doi.org/10.1109/INEC.2013.6465961 |
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1681042269464952832 |