Direct writing of single germanium vacancy center arrays in diamond
Color centers in diamond are promising solid-state qubits for scalable quantum photonics applications. Amongst many defects, those with inversion symmetry are of an interest due to their promising optical properties. In this work, we demonstrate a maskless implantation of an array of bright, single...
Saved in:
Main Authors: | , , , , , , |
---|---|
Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2019
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/105762 http://hdl.handle.net/10220/48753 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
id |
sg-ntu-dr.10356-105762 |
---|---|
record_format |
dspace |
spelling |
sg-ntu-dr.10356-1057622023-02-28T19:46:18Z Direct writing of single germanium vacancy center arrays in diamond Zhou, Yu Mu, Zhao Adamo, Giorgio Bauerdick, Sven Rudzinski, Axel Aharonovich, Igor Gao, Wei-bo School of Physical and Mathematical Sciences The Photonics Institute Centre for Disruptive Photonic Technologies Conversion Yield Germanium Vacancy Center DRNTU::Science::Physics Color centers in diamond are promising solid-state qubits for scalable quantum photonics applications. Amongst many defects, those with inversion symmetry are of an interest due to their promising optical properties. In this work, we demonstrate a maskless implantation of an array of bright, single germanium vacancy (GeV) centers in diamond. Employing the direct focused ion beam technique, single GeV emitters are engineered with the spatial accuracy of tens of nanometers. The single GeV creation ratio reaches as high as 53% with the dose of 200 Ge+ ions per spot. The presented fabrication method is promising for future nanofabrication of integrated photonic structures with GeV emitters as a leading platform for spin-spin interactions. NRF (Natl Research Foundation, S’pore) ASTAR (Agency for Sci., Tech. and Research, S’pore) MOE (Min. of Education, S’pore) Published version 2019-06-14T04:06:53Z 2019-12-06T21:57:26Z 2019-06-14T04:06:53Z 2019-12-06T21:57:26Z 2018 Journal Article Zhou, Y., Mu, Z., Adamo, G., Bauerdick, S., Rudzinski, A., Aharonovich, I., & Gao, W. (2018). Direct writing of single germanium vacancy center arrays in diamond. New Journal of Physics, 20(12), 125004-. doi:10.1088/1367-2630/aaf2ac https://hdl.handle.net/10356/105762 http://hdl.handle.net/10220/48753 10.1088/1367-2630/aaf2ac en New Journal of Physics © 2018 The Author(s). Published by IOP Publishing Ltd on behalf of the Institute of Physics and Deutsche Physikalische Gesellschaft. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. 5 p. application/pdf |
institution |
Nanyang Technological University |
building |
NTU Library |
continent |
Asia |
country |
Singapore Singapore |
content_provider |
NTU Library |
collection |
DR-NTU |
language |
English |
topic |
Conversion Yield Germanium Vacancy Center DRNTU::Science::Physics |
spellingShingle |
Conversion Yield Germanium Vacancy Center DRNTU::Science::Physics Zhou, Yu Mu, Zhao Adamo, Giorgio Bauerdick, Sven Rudzinski, Axel Aharonovich, Igor Gao, Wei-bo Direct writing of single germanium vacancy center arrays in diamond |
description |
Color centers in diamond are promising solid-state qubits for scalable quantum photonics applications. Amongst many defects, those with inversion symmetry are of an interest due to their promising optical properties. In this work, we demonstrate a maskless implantation of an array of bright, single germanium vacancy (GeV) centers in diamond. Employing the direct focused ion beam technique, single GeV emitters are engineered with the spatial accuracy of tens of nanometers. The single GeV creation ratio reaches as high as 53% with the dose of 200 Ge+ ions per spot. The presented fabrication method is promising for future nanofabrication of integrated photonic structures with GeV emitters as a leading platform for spin-spin interactions. |
author2 |
School of Physical and Mathematical Sciences |
author_facet |
School of Physical and Mathematical Sciences Zhou, Yu Mu, Zhao Adamo, Giorgio Bauerdick, Sven Rudzinski, Axel Aharonovich, Igor Gao, Wei-bo |
format |
Article |
author |
Zhou, Yu Mu, Zhao Adamo, Giorgio Bauerdick, Sven Rudzinski, Axel Aharonovich, Igor Gao, Wei-bo |
author_sort |
Zhou, Yu |
title |
Direct writing of single germanium vacancy center arrays in diamond |
title_short |
Direct writing of single germanium vacancy center arrays in diamond |
title_full |
Direct writing of single germanium vacancy center arrays in diamond |
title_fullStr |
Direct writing of single germanium vacancy center arrays in diamond |
title_full_unstemmed |
Direct writing of single germanium vacancy center arrays in diamond |
title_sort |
direct writing of single germanium vacancy center arrays in diamond |
publishDate |
2019 |
url |
https://hdl.handle.net/10356/105762 http://hdl.handle.net/10220/48753 |
_version_ |
1759856274818727936 |