High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices

High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices

Single crystals of linear fused rings with nitrogen heteroatom, indolo[3,2-b]carbazole (ICZ), have been synthesized. In addition, field-effect transistors (FETs) of planar ICZ single crystals have been fabricated. The hole mobility approaches values of up to 1.0 cm2 V−1 s−1 with an on/off ratio of ∼...

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Bibliographic Details
Main Authors: Hu, Wenping, Jiang, Hui, Zhao, Huaping, Zhang, Keke K., Chen, Xiaodong, Kloc, Christian
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Materials
Online Access:https://hdl.handle.net/10356/105775
http://hdl.handle.net/10220/20968
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Institution: Nanyang Technological University
Language: English
Description
Summary:Single crystals of linear fused rings with nitrogen heteroatom, indolo[3,2-b]carbazole (ICZ), have been synthesized. In addition, field-effect transistors (FETs) of planar ICZ single crystals have been fabricated. The hole mobility approaches values of up to 1.0 cm2 V−1 s−1 with an on/off ratio of ∼106. The transistors exhibit sensitivity to nitric oxide (NO). The gas-sensitive behavior indicates the great potential for future low-cost and high-density storage devices.

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