High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices

High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices

Single crystals of linear fused rings with nitrogen heteroatom, indolo[3,2-b]carbazole (ICZ), have been synthesized. In addition, field-effect transistors (FETs) of planar ICZ single crystals have been fabricated. The hole mobility approaches values of up to 1.0 cm2 V−1 s−1 with an on/off ratio of ∼...

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Main Authors: Hu, Wenping, Jiang, Hui, Zhao, Huaping, Zhang, Keke K., Chen, Xiaodong, Kloc, Christian
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Materials
Online Access:https://hdl.handle.net/10356/105775
http://hdl.handle.net/10220/20968
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1057752020-06-01T10:13:41Z High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices Hu, Wenping Jiang, Hui Zhao, Huaping Zhang, Keke K. Chen, Xiaodong Kloc, Christian School of Materials Science & Engineering DRNTU::Engineering::Materials Single crystals of linear fused rings with nitrogen heteroatom, indolo[3,2-b]carbazole (ICZ), have been synthesized. In addition, field-effect transistors (FETs) of planar ICZ single crystals have been fabricated. The hole mobility approaches values of up to 1.0 cm2 V−1 s−1 with an on/off ratio of ∼106. The transistors exhibit sensitivity to nitric oxide (NO). The gas-sensitive behavior indicates the great potential for future low-cost and high-density storage devices. 2014-09-24T01:58:48Z 2019-12-06T21:57:36Z 2014-09-24T01:58:48Z 2019-12-06T21:57:36Z 2011 2011 Journal Article Jiang, H., Zhao, H., Zhang, K. K., Chen, X., Kloc, C., & Hu, W. (2011). High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices. Advanced Materials, 23(43), 5075-5080. 0935-9648 https://hdl.handle.net/10356/105775 http://hdl.handle.net/10220/20968 10.1002/adma.201102975 en Advanced materials © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Materials
spellingShingle DRNTU::Engineering::Materials
Hu, Wenping
Jiang, Hui
Zhao, Huaping
Zhang, Keke K.
Chen, Xiaodong
Kloc, Christian
High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices
description Single crystals of linear fused rings with nitrogen heteroatom, indolo[3,2-b]carbazole (ICZ), have been synthesized. In addition, field-effect transistors (FETs) of planar ICZ single crystals have been fabricated. The hole mobility approaches values of up to 1.0 cm2 V−1 s−1 with an on/off ratio of ∼106. The transistors exhibit sensitivity to nitric oxide (NO). The gas-sensitive behavior indicates the great potential for future low-cost and high-density storage devices.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Hu, Wenping
Jiang, Hui
Zhao, Huaping
Zhang, Keke K.
Chen, Xiaodong
Kloc, Christian
format Article
author Hu, Wenping
Jiang, Hui
Zhao, Huaping
Zhang, Keke K.
Chen, Xiaodong
Kloc, Christian
author_sort Hu, Wenping
title High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices
title_short High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices
title_full High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices
title_fullStr High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices
title_full_unstemmed High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices
title_sort high-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices
publishDate 2014
url https://hdl.handle.net/10356/105775
http://hdl.handle.net/10220/20968
_version_ 1681059347050790912

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