A new millimeter-wave fixture deembedding method based on generalized cascade network model

• Main Authors: Loo, Xi Sung, Yeo, Kiat Seng, Chew, Kok Wai Johnny, Chan, L. H. K., Ong, Shih Ni, Do, Manh Anh, Boon, Chirn Chye
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/105844; http://hdl.handle.net/10220/17919; http://dx.doi.org/10.1109/LED.2012.2237157
• Institution: Nanyang Technological University

In this letter, a universal cascade-based deembedding technique was presented for on-wafer characterization of the RF CMOS device. As compared with existing deembedding approaches, it is developed based on unique combinations of two THRU structures that enable efficient deembedding of fixture parasitics without any inaccurate lumped approximation or requirement of known standards. The proposed deembedding technique is validated on 0.13- μm CMOS devices and has been proven to be more accurate than existing lumped and cascade-based deembedding techniques. As a result, it gives deeper physical prediction on transistor gate capacitances and transconductance. Therefore, it is highly suitable to be applied for device characterization at millimeter-wave frequencies.