Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition

Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition

Bandgap engineering is necessary for the application of InSb in long wavelength infrared photodetection. InSbN alloys hetero-eptiaxially were therefore deposited on GaAs substrate by metal-organic chemical vapor deposition (MOCVD), expecting a large band gap reduction by N incorporation for long wav...

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Bibliographic Details
Main Authors: Jin, Yun Jiang, Tang, Xiao Hong, Ke, Chang, Yu, S. Y., Zhang, Dianwen Hua
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2019
Subjects:
MOCVD
DRNTU::Engineering::Electrical and electronic engineering
InSb
Online Access:https://hdl.handle.net/10356/105853
http://hdl.handle.net/10220/47858
http://dx.doi.org/10.1016/j.jallcom.2018.04.287
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/105853
http://hdl.handle.net/10220/47858
http://dx.doi.org/10.1016/j.jallcom.2018.04.287

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