Hetero-epitaxial growth and mechanism of one-dimensional InSb nanostructures on GaAs substrate by MOCVD

• Main Authors: Jin, Y. J., Zheng, X. E., Gong, S. J., Ke, Chang, Xiao, M. Q., Ling, B., Yu, S. Y., Zhang, Dao Hua
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Electrical and electronic engineering; InSb; Nanowire
• Online Access: https://hdl.handle.net/10356/160987
• Institution: Nanyang Technological University

As one of the most fundamental aspects of nanomaterials, the crystal orientation in semiconductor nanowires (NWs) profoundly reshapes their properties, e.g. surface chemistry, optical response and electrical transport. Among the various semiconductor NWs, free-standing InSb NWs hold promise for maki...