Characterization and modeling of atomic layer deposited high-density trench capacitors in silicon

• المؤلفون الرئيسيون: Matters-Kammerer, Marion K., Jinesh, K. B., Rijks, Theo G. S. M., Roozeboom, Fred., Klootwijk, Johan H.
• مؤلفون آخرون: Energy Research Institute @NTU
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/106215; http://hdl.handle.net/10220/11448; http://dx.doi.org/10.1109/TSM.2012.2183903

A detailed electrical analysis of multiple layer trench capacitors fabricated in silicon with atomic-layer-deposited Al2O3 and TiN is presented. It is shown that in situ ozone annealing of the Al2O3 layers prior to the TiN electrode deposition significantly improves the electric properties of the de...