Characterization and modeling of atomic layer deposited high-density trench capacitors in silicon

• Main Authors: Matters-Kammerer, Marion K., Jinesh, K. B., Rijks, Theo G. S. M., Roozeboom, Fred., Klootwijk, Johan H.
• Other Authors: Energy Research Institute @NTU
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/106215; http://hdl.handle.net/10220/11448; http://dx.doi.org/10.1109/TSM.2012.2183903
• Institution: Nanyang Technological University

A detailed electrical analysis of multiple layer trench capacitors fabricated in silicon with atomic-layer-deposited Al2O3 and TiN is presented. It is shown that in situ ozone annealing of the Al2O3 layers prior to the TiN electrode deposition significantly improves the electric properties of the de...