Area selective atomic layer deposition (AS-ALD) for electronic device applications
Due to the continuous shrinking of microelectronic devices, nanoscale materials are being deposited and stacked into the high density multilayer structures (e.g. 3D-FETs, interconnects, core shell structures, etc). However, advanced and novel process methods are required for the fabrication of these...
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2018
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| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/73109 |
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| 機構: | Nanyang Technological University |
| 語言: | English |