Area selective atomic layer deposition (AS-ALD) for electronic device applications
Due to the continuous shrinking of microelectronic devices, nanoscale materials are being deposited and stacked into the high density multilayer structures (e.g. 3D-FETs, interconnects, core shell structures, etc). However, advanced and novel process methods are required for the fabrication of these...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2018
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| Online Access: | http://hdl.handle.net/10356/73109 |
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| Institution: | Nanyang Technological University |
| Language: | English |