Enhancement in the performance of ultrathin hematite photoanode for water splitting by an oxide underlayer
A 2-nm thick Nb2O5 underlayer deposited by atomic layer deposition increases the charge separation efficiency and the photovoltage of ultrathin hematite films by suppressing electron back injection. Absorbed photon-to-current efficiencies (APCE) as high as 40%, which are one of the highest ever repo...
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| المؤلفون الرئيسيون: | , , , , , , |
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| مؤلفون آخرون: | |
| التنسيق: | مقال |
| اللغة: | English |
| منشور في: |
2013
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| الوصول للمادة أونلاين: | https://hdl.handle.net/10356/106608 http://hdl.handle.net/10220/10667 |
| الوسوم: |
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| المؤسسة: | Nanyang Technological University |
| اللغة: | English |
| الملخص: | A 2-nm thick Nb2O5 underlayer deposited by atomic layer deposition increases the charge separation efficiency and the photovoltage of ultrathin hematite films by suppressing electron back injection. Absorbed photon-to-current efficiencies (APCE) as high as 40%, which are one of the highest ever reported with hematite photoanodes, are obtained at 400 nm at +1.43 V vs. RHE. |
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