The effect of annealing temperature on the optical properties of In2S3 thin film

• Main Authors: Mathews, Nripan, Mhaisalkar, Subodh Gautam, Boxi, Xu, Kumar, Mulmudi Hemant, Prabhakar, Rajiv Ramanujam
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/106611; http://hdl.handle.net/10220/13646
• Institution: Nanyang Technological University

Indium Sulfide (In2S3) thin film were deposited on glass substrate through successive ionic layer adsorption and reaction (SILAR) method. The samples were annealed at 250 °C, 350 °C and 450 °C respectively after deposition. The X-ray diffraction (XRD) analysis shows that the sample annealed at 450 °C has the most clear and obvious XRD pattern, which indicates that In2S3 annealed at 450 °C possess the highest crystallinity. Ultraviolet-visible spectroscopy analysis of the samples shows that the band gap of In2S3 is around 2 eV. This study shows that annealing does not induce any change in optical bandgap of In2S3 thin films on glass substrates as reported elsewhere.