The effect of annealing temperature on the optical properties of In2S3 thin film
Indium Sulfide (In2S3) thin film were deposited on glass substrate through successive ionic layer adsorption and reaction (SILAR) method. The samples were annealed at 250 °C, 350 °C and 450 °C respectively after deposition. The X-ray diffraction (XRD) analysis shows that the sample annealed at 450 °...
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Main Authors: | Mathews, Nripan, Mhaisalkar, Subodh Gautam, Boxi, Xu, Kumar, Mulmudi Hemant, Prabhakar, Rajiv Ramanujam |
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Other Authors: | School of Materials Science & Engineering |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/106611 http://hdl.handle.net/10220/13646 |
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Institution: | Nanyang Technological University |
Language: | English |
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