Temperature dependence of the electrical transport properties in few-layer graphene interconnects
We report a systematic investigation of the temperature dependence of electrical resistance behaviours in tri- and four-layer graphene interconnects. Nonlinear current–voltage characteristics were observed at different temperatures, which are attributed to the heating effect. With the resistance c...
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| Main Authors: | , , , |
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| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2015
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/106646 http://hdl.handle.net/10220/24994 |
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| 機構: | Nanyang Technological University |
| 語言: | English |
| 總結: | We report a systematic investigation of the temperature dependence of electrical resistance behaviours in tri- and
four-layer graphene interconnects. Nonlinear current–voltage characteristics were observed at different
temperatures, which are attributed to the heating effect. With the resistance curve derivative analysis method, our
experimental results suggest that Coulomb interactions play an essential role in our devices. The room temperature
measurements further indicate that the graphene layers exhibit the characteristics of semiconductors mainly due to
the Coulomb scattering effects. By combining the Coulomb and short-range scattering theory, we derive an analytical
model to explain the temperature dependence of the resistance, which agrees well with the experimental results. |
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