Concentric and spiral few-layer graphene : growth driven by interfacial nucleation vs screw dislocation

• المؤلفون الرئيسيون: Tay, Roland Yingjie, Park, Hyo Ju, Lin, Jinjun, Ng, Zhi Kia, Jing, Lin, Li, Hongling, Zhu, Minmin, Tsang, Siu Hon, Lee, Zonghoon, Teo, Edwin Hang Tong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; Crystallization; Layers
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/137196
• المؤسسة: Nanyang Technological University

Spiral growth of various nanomaterials including some two-dimensional (2D) transition metal dichalcogenides had recently been experimentally realized using chemical vapor deposition (CVD). However, such growth that is driven by screw dislocation remained elusive for graphene and is rarely discussed...