Concentric and spiral few-layer graphene : growth driven by interfacial nucleation vs screw dislocation

• Main Authors: Tay, Roland Yingjie, Park, Hyo Ju, Lin, Jinjun, Ng, Zhi Kia, Jing, Lin, Li, Hongling, Zhu, Minmin, Tsang, Siu Hon, Lee, Zonghoon, Teo, Edwin Hang Tong
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Crystallization; Layers
• Online Access: https://hdl.handle.net/10356/137196
• Institution: Nanyang Technological University

Spiral growth of various nanomaterials including some two-dimensional (2D) transition metal dichalcogenides had recently been experimentally realized using chemical vapor deposition (CVD). However, such growth that is driven by screw dislocation remained elusive for graphene and is rarely discussed...