Concentric and spiral few-layer graphene : growth driven by interfacial nucleation vs screw dislocation

Spiral growth of various nanomaterials including some two-dimensional (2D) transition metal dichalcogenides had recently been experimentally realized using chemical vapor deposition (CVD). However, such growth that is driven by screw dislocation remained elusive for graphene and is rarely discussed...

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Main Authors: Tay, Roland Yingjie, Park, Hyo Ju, Lin, Jinjun, Ng, Zhi Kia, Jing, Lin, Li, Hongling, Zhu, Minmin, Tsang, Siu Hon, Lee, Zonghoon, Teo, Edwin Hang Tong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
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Online Access:https://hdl.handle.net/10356/137196
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1371962020-06-01T10:01:43Z Concentric and spiral few-layer graphene : growth driven by interfacial nucleation vs screw dislocation Tay, Roland Yingjie Park, Hyo Ju Lin, Jinjun Ng, Zhi Kia Jing, Lin Li, Hongling Zhu, Minmin Tsang, Siu Hon Lee, Zonghoon Teo, Edwin Hang Tong School of Electrical and Electronic Engineering School of Materials Science & Engineering Temasek Laboratories Engineering::Electrical and electronic engineering Crystallization Layers Spiral growth of various nanomaterials including some two-dimensional (2D) transition metal dichalcogenides had recently been experimentally realized using chemical vapor deposition (CVD). However, such growth that is driven by screw dislocation remained elusive for graphene and is rarely discussed because of the use of metal catalysts. In this work, we show that formation of few-layer graphene (FLG) with a spiral structure driven by screw dislocation can be obtained alongside FLG having a concentric layered structure formed by interfacial nucleation (nucleation at the graphene/Cu interface) using Cu-catalyzed ambient pressure CVD. Unlike commonly reported FLG grown by interfacial nucleation where the second layer is grown independently beneath the first, the growth of a spiral structure adopts a top growth mechanism where the top layers are an extension from the initial monolayer which spirals around an axial dislocation in self-perpetuating steps. Since the same atomic orientation is preserved, the subsequent spiraling layers are stacked in an oriented AB-stacked configuration. This contrasts with FLG formed by interfacial nucleation where turbostratic stacking of the entire adlayer may exist. In both growth scenarios, the second layer (either top or bottom) can grow across the grain boundaries of the initial monolayer domains, forming partial regions with turbostratic stacking configuration due to weak interlayer van der Waals interactions. The unique interlayer coupling of FLG spirals, which enable superior conductivity along the normal of the 2D crystal with spiraling trajectories, are expected to have new and interesting nanoscale applications. NRF (Natl Research Foundation, S’pore) Accepted version 2020-03-06T01:45:13Z 2020-03-06T01:45:13Z 2018 Journal Article Tay, R. Y., Park, H. J., Lin, J., Ng, Z. K., Jing, L., Li, H., . . . Teo, E. H. T. (2018). Concentric and spiral few-layer graphene : growth driven by interfacial nucleation vs screw dislocation. Chemistry of Materials, 30(19), 6858-6866. doi:10.1021/acs.chemmater.8b03024 0897-4756 https://hdl.handle.net/10356/137196 10.1021/acs.chemmater.8b03024 2-s2.0-85053881130 19 30 6858 6866 en Chemistry of Materials This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.chemmater.8b03024 application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
Crystallization
Layers
spellingShingle Engineering::Electrical and electronic engineering
Crystallization
Layers
Tay, Roland Yingjie
Park, Hyo Ju
Lin, Jinjun
Ng, Zhi Kia
Jing, Lin
Li, Hongling
Zhu, Minmin
Tsang, Siu Hon
Lee, Zonghoon
Teo, Edwin Hang Tong
Concentric and spiral few-layer graphene : growth driven by interfacial nucleation vs screw dislocation
description Spiral growth of various nanomaterials including some two-dimensional (2D) transition metal dichalcogenides had recently been experimentally realized using chemical vapor deposition (CVD). However, such growth that is driven by screw dislocation remained elusive for graphene and is rarely discussed because of the use of metal catalysts. In this work, we show that formation of few-layer graphene (FLG) with a spiral structure driven by screw dislocation can be obtained alongside FLG having a concentric layered structure formed by interfacial nucleation (nucleation at the graphene/Cu interface) using Cu-catalyzed ambient pressure CVD. Unlike commonly reported FLG grown by interfacial nucleation where the second layer is grown independently beneath the first, the growth of a spiral structure adopts a top growth mechanism where the top layers are an extension from the initial monolayer which spirals around an axial dislocation in self-perpetuating steps. Since the same atomic orientation is preserved, the subsequent spiraling layers are stacked in an oriented AB-stacked configuration. This contrasts with FLG formed by interfacial nucleation where turbostratic stacking of the entire adlayer may exist. In both growth scenarios, the second layer (either top or bottom) can grow across the grain boundaries of the initial monolayer domains, forming partial regions with turbostratic stacking configuration due to weak interlayer van der Waals interactions. The unique interlayer coupling of FLG spirals, which enable superior conductivity along the normal of the 2D crystal with spiraling trajectories, are expected to have new and interesting nanoscale applications.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Tay, Roland Yingjie
Park, Hyo Ju
Lin, Jinjun
Ng, Zhi Kia
Jing, Lin
Li, Hongling
Zhu, Minmin
Tsang, Siu Hon
Lee, Zonghoon
Teo, Edwin Hang Tong
format Article
author Tay, Roland Yingjie
Park, Hyo Ju
Lin, Jinjun
Ng, Zhi Kia
Jing, Lin
Li, Hongling
Zhu, Minmin
Tsang, Siu Hon
Lee, Zonghoon
Teo, Edwin Hang Tong
author_sort Tay, Roland Yingjie
title Concentric and spiral few-layer graphene : growth driven by interfacial nucleation vs screw dislocation
title_short Concentric and spiral few-layer graphene : growth driven by interfacial nucleation vs screw dislocation
title_full Concentric and spiral few-layer graphene : growth driven by interfacial nucleation vs screw dislocation
title_fullStr Concentric and spiral few-layer graphene : growth driven by interfacial nucleation vs screw dislocation
title_full_unstemmed Concentric and spiral few-layer graphene : growth driven by interfacial nucleation vs screw dislocation
title_sort concentric and spiral few-layer graphene : growth driven by interfacial nucleation vs screw dislocation
publishDate 2020
url https://hdl.handle.net/10356/137196
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