Electrical properties and subband occupancy at the (La, Sr)(Al, Ta)O3/SrTiO3 interface

• المؤلفون الرئيسيون: Han, K., Huang, Z., Zeng, S. W., Yang, M., Li, C. J., Zhou, W. X., Wang, Renshaw Xiao, Venkatesan, T., Coey, J. M. D., Goiran, M., Escoffier, W., Ariando
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: Electronic Structure; Hall Effect; DRNTU::Science::Physics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/106772; http://hdl.handle.net/10220/48973

The quasi-two-dimensional electron gas at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility (La0.3Sr0.7) (Al0.65Ta0.35) O3/SrTiO3 interface. Before oxygen annealing, the as-...