A novel ultra-low power two-terminal zener voltage reference
A novel ultra-low power two terminal zener voltage reference is designed and implemented. It realizes the concept of using sub-threshold region of the MOSFET to achieve a very low and stable output voltage within a two terminal circuit topology. This proposed voltage reference was fabricated with Gl...
محفوظ في:
| المؤلفون الرئيسيون: | , , |
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| مؤلفون آخرون: | |
| التنسيق: | مقال |
| اللغة: | English |
| منشور في: |
2013
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://hdl.handle.net/10356/106794 http://hdl.handle.net/10220/17666 http://dx.doi.org/10.1142/S0218126612400178 |
| الوسوم: |
إضافة وسم
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| المؤسسة: | Nanyang Technological University |
| اللغة: | English |
| الملخص: | A novel ultra-low power two terminal zener voltage reference is designed and implemented. It realizes the concept of using sub-threshold region of the MOSFET to achieve a very low and stable output voltage within a two terminal circuit topology. This proposed voltage reference was fabricated with Global Foundries 0.18-μm CMOS process, consuming only a very small die area of 0.0009 mm2. Experimental results, carried out on five different silicon samples, explicitly show that it can yield a stable output voltage of 0.22 V at room temperature. It achieves an average temperature coefficient of 6.4 ppm/°C across a wide temperature range from 0°C to 150°C with a standard deviation of 2 ppm/°C. Furthermore, it achieves an ultra-low power consumption of 2 μW. The load regulation is 20 mV/V. This simple and innovative two terminal device can be used to provide a very low and constant voltage difference between any two nodes in an analog circuit. |
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