Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte
Transparent junctionless organic-inorganic hybrid electric-double-layer thin-film transistors are demonstrated using a reinforced solution-processed chitosan-based biopolymer electrolyte as a dielectric layer. The specific feature of such device is that the channel and source/drain electrodes are re...
Saved in:
Main Authors: | , , |
---|---|
Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/106825 http://hdl.handle.net/10220/17611 http://dx.doi.org/10.1109/TED.2013.2258922 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
id |
sg-ntu-dr.10356-106825 |
---|---|
record_format |
dspace |
spelling |
sg-ntu-dr.10356-1068252019-12-06T22:19:12Z Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte Jiang, Jie Wan, Qing Zhang, Qing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Transparent junctionless organic-inorganic hybrid electric-double-layer thin-film transistors are demonstrated using a reinforced solution-processed chitosan-based biopolymer electrolyte as a dielectric layer. The specific feature of such device is that the channel and source/drain electrodes are realized using a thin indium tin oxide (ITO) film without any source/drain junction. A SiO2 film (~5 nm)/chitosan organic-inorganic hybrid bilayer dielectric is found to be an efficient way to improve the stability and performance of the devices. Our results indicate that the transistor gated by organic-inorganic hybrid bilayer dielectric with a thin ITO channel (~10 nm) exhibited a better performance with a lower subthreshold swing (84 mV/dec), a larger ON/OFF ratio (5.5×107), and a smaller bias-stressing threshold voltage shift (ΔVth=0.13 V) . A physical model based on energy diagram with 1-D Poisson equation is proposed to interpret the operating mechanism. These results clearly show that the proposed architecture can provide a new opportunity for the next-generation low-voltage low-cost device design. 2013-11-12T08:11:00Z 2019-12-06T22:19:12Z 2013-11-12T08:11:00Z 2019-12-06T22:19:12Z 2013 2013 Journal Article Jiang, J., Wan, Q., & Zhang, Q. (2013). Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte. IEEE Transactions on Electron Devices, 60(6), 1951-1957. 0018-9383 https://hdl.handle.net/10356/106825 http://hdl.handle.net/10220/17611 http://dx.doi.org/10.1109/TED.2013.2258922 en IEEE transactions on electron devices |
institution |
Nanyang Technological University |
building |
NTU Library |
country |
Singapore |
collection |
DR-NTU |
language |
English |
topic |
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits |
spellingShingle |
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Jiang, Jie Wan, Qing Zhang, Qing Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte |
description |
Transparent junctionless organic-inorganic hybrid electric-double-layer thin-film transistors are demonstrated using a reinforced solution-processed chitosan-based biopolymer electrolyte as a dielectric layer. The specific feature of such device is that the channel and source/drain electrodes are realized using a thin indium tin oxide (ITO) film without any source/drain junction. A SiO2 film (~5 nm)/chitosan organic-inorganic hybrid bilayer dielectric is found to be an efficient way to improve the stability and performance of the devices. Our results indicate that the transistor gated by organic-inorganic hybrid bilayer dielectric with a thin ITO channel (~10 nm) exhibited a better performance with a lower subthreshold swing (84 mV/dec), a larger ON/OFF ratio (5.5×107), and a smaller bias-stressing threshold voltage shift (ΔVth=0.13 V) . A physical model based on energy diagram with 1-D Poisson equation is proposed to interpret the operating mechanism. These results clearly show that the proposed architecture can provide a new opportunity for the next-generation low-voltage low-cost device design. |
author2 |
School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering Jiang, Jie Wan, Qing Zhang, Qing |
format |
Article |
author |
Jiang, Jie Wan, Qing Zhang, Qing |
author_sort |
Jiang, Jie |
title |
Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte |
title_short |
Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte |
title_full |
Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte |
title_fullStr |
Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte |
title_full_unstemmed |
Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte |
title_sort |
transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte |
publishDate |
2013 |
url |
https://hdl.handle.net/10356/106825 http://hdl.handle.net/10220/17611 http://dx.doi.org/10.1109/TED.2013.2258922 |
_version_ |
1681038009953157120 |