The dynamics of nickelidation for self-aligned contacts to InGaAs channels

• المؤلفون الرئيسيون: Chen, Renjie, Dai, Xing, Jungjohann, Katherine L., Mook, William Moyer, Nogan, John, Soci, Cesare, Dayeh, Shadi
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: AFM Topography; InGaAs; DRNTU::Science::Physics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/106868; http://hdl.handle.net/10220/48992

The rapid development of ultrascaled III−V compound-semiconductor devices requires the detailed investigation of metal-semiconductor contacts at the nanoscale where crystal orientation, size, and structural phase play dominant roles in device performance. Here, we report comprehensive studies on the...