The dynamics of nickelidation for self-aligned contacts to InGaAs channels

• Main Authors: Chen, Renjie, Dai, Xing, Jungjohann, Katherine L., Mook, William Moyer, Nogan, John, Soci, Cesare, Dayeh, Shadi
• 其他作者: School of Physical and Mathematical Sciences
• 格式: Article
• 語言: English
• 出版: 2019
• 主題: AFM Topography; InGaAs; DRNTU::Science::Physics
• 在線閱讀: https://hdl.handle.net/10356/106868; http://hdl.handle.net/10220/48992

The rapid development of ultrascaled III−V compound-semiconductor devices requires the detailed investigation of metal-semiconductor contacts at the nanoscale where crystal orientation, size, and structural phase play dominant roles in device performance. Here, we report comprehensive studies on the...