A hole modulator for InGaN/GaN light-emitting diodes

• Main Authors: Zhang, Zi-Hui, Kyaw, Zabu, Liu, Wei, Ji, Yun, Wang, Liancheng, Tan, Swee Tiam, Sun, Xiao Wei, Demir, Hilmi Volkan
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2015
• 主題: DRNTU::Science::Physics::Optics and light
• 在線閱讀: https://hdl.handle.net/10356/106993; http://hdl.handle.net/10220/25278

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase...