A hole modulator for InGaN/GaN light-emitting diodes

• المؤلفون الرئيسيون: Zhang, Zi-Hui, Kyaw, Zabu, Liu, Wei, Ji, Yun, Wang, Liancheng, Tan, Swee Tiam, Sun, Xiao Wei, Demir, Hilmi Volkan
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Science::Physics::Optics and light
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/106993; http://hdl.handle.net/10220/25278
• المؤسسة: Nanyang Technological University

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase...