Impact of channel engineering on hot-electron injection in the deep-submicrometer flash memory cell

• Main Author: Zhang, Yu
• Other Authors: Tan Kok Tong
• Format: Theses and Dissertations
• Language: English
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• Online Access: https://hdl.handle.net/10356/13192
• Institution: Nanyang Technological University

Basic mechanisms governing the generation and injection of hot electrons in the N-channel MOSFET are of fundamental importance to non-volatile memory application and reliability. In this thesis, we have reported direct observation of a non-classical hot-electron gate current in the scaled MOSFET mem...