Low voltage CMOS operational amplifier design towards maximum CMR

• المؤلف الرئيسي: Tan, Chee Lam.
• مؤلفون آخرون: Ng, Lian Soon
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/13198
• المؤسسة: Nanyang Technological University

For the past few decades, there has been a ceaseless drive to reduce the minimum feature size of a MOS transistor. Reduced silicon area and, hence, lowered cost is a major motivational factor for such a trend. However, reducing transistor dimensions would also mean that the gate thickness is similar...