Low voltage CMOS operational amplifier design towards maximum CMR
For the past few decades, there has been a ceaseless drive to reduce the minimum feature size of a MOS transistor. Reduced silicon area and, hence, lowered cost is a major motivational factor for such a trend. However, reducing transistor dimensions would also mean that the gate thickness is similar...
Saved in:
Main Author: | |
---|---|
Other Authors: | |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2008
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/13198 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |