Low voltage CMOS operational amplifier design towards maximum CMR

For the past few decades, there has been a ceaseless drive to reduce the minimum feature size of a MOS transistor. Reduced silicon area and, hence, lowered cost is a major motivational factor for such a trend. However, reducing transistor dimensions would also mean that the gate thickness is similar...

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書目詳細資料
主要作者: Tan, Chee Lam.
其他作者: Ng, Lian Soon
格式: Theses and Dissertations
語言:English
出版: 2008
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在線閱讀:http://hdl.handle.net/10356/13198
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