Low voltage CMOS operational amplifier design towards maximum CMR
For the past few decades, there has been a ceaseless drive to reduce the minimum feature size of a MOS transistor. Reduced silicon area and, hence, lowered cost is a major motivational factor for such a trend. However, reducing transistor dimensions would also mean that the gate thickness is similar...
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格式: | Theses and Dissertations |
語言: | English |
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2008
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在線閱讀: | http://hdl.handle.net/10356/13198 |
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