Study of indium gallium phosphide compound semiconductor grown by solid source molecular beam epitaxy

This thesis presents the molecular beam epitaxial (MBE) growth of In0.48Ga0.52P epilayers on GaAs substrate (001) using the valved phosphorus cracker cell at various growth conditions. Results from crystalline quality, optical, transport and surface morphology characterizations of the material syste...

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Main Author:	Mah, Kia Woon
Other Authors:	Yoon, Soon Fatt
Format:	Theses and Dissertations
Language:	English
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:	http://hdl.handle.net/10356/13321
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-13321
record_format	dspace
spelling	sg-ntu-dr.10356-133212023-07-04T15:13:04Z Study of indium gallium phosphide compound semiconductor grown by solid source molecular beam epitaxy Mah, Kia Woon Yoon, Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors This thesis presents the molecular beam epitaxial (MBE) growth of In0.48Ga0.52P epilayers on GaAs substrate (001) using the valved phosphorus cracker cell at various growth conditions. Results from crystalline quality, optical, transport and surface morphology characterizations of the material system are included. Master of Engineering 2008-10-20T07:24:45Z 2008-10-20T07:24:45Z 1999 1999 Thesis http://hdl.handle.net/10356/13321 en 101 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Mah, Kia Woon Study of indium gallium phosphide compound semiconductor grown by solid source molecular beam epitaxy
description	This thesis presents the molecular beam epitaxial (MBE) growth of In0.48Ga0.52P epilayers on GaAs substrate (001) using the valved phosphorus cracker cell at various growth conditions. Results from crystalline quality, optical, transport and surface morphology characterizations of the material system are included.
author2	Yoon, Soon Fatt
author_facet	Yoon, Soon Fatt Mah, Kia Woon
format	Theses and Dissertations
author	Mah, Kia Woon
author_sort	Mah, Kia Woon
title	Study of indium gallium phosphide compound semiconductor grown by solid source molecular beam epitaxy
title_short	Study of indium gallium phosphide compound semiconductor grown by solid source molecular beam epitaxy
title_full	Study of indium gallium phosphide compound semiconductor grown by solid source molecular beam epitaxy
title_fullStr	Study of indium gallium phosphide compound semiconductor grown by solid source molecular beam epitaxy
title_full_unstemmed	Study of indium gallium phosphide compound semiconductor grown by solid source molecular beam epitaxy
title_sort	study of indium gallium phosphide compound semiconductor grown by solid source molecular beam epitaxy
publishDate	2008
url	http://hdl.handle.net/10356/13321
_version_	1772825202220072960

Study of indium gallium phosphide compound semiconductor grown by solid source molecular beam epitaxy

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