Heterogeneous integration of GaN and BCD technologies and its applications to high conversion-ratio DC-DC boost converter IC
This letter presents a novel technology for the integration of gallium nitride (GaN) power devices with silicon control circuits. It comprises stacked GaN power transistors and bipolar-CMOS-double-diffused metal-oxide-semiconductor (DMOS) (BCD) circuits. It leverages on both advantages of the high-v...
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Main Authors: | , , , , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2020
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/137240 |
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Institution: | Nanyang Technological University |
Language: | English |