Heterogeneous integration of GaN and BCD technologies and its applications to high conversion-ratio DC-DC boost converter IC

• Main Authors: Meng, Fanyi, Disney, Don, Liu, Bei, Volkan, Yildirim Baris, Zhou, Ao, Liang, Zhipeng, Yi, Xiang, Selvaraj, Susai Lawrence, Peng, Lulu, Ma, Kaixue, Boon, Chirn Chye
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Boost Converter; CMOS DC–DC Converter Complementarymetal-oxide-semiconductor
• Online Access: https://hdl.handle.net/10356/137240
• Institution: Nanyang Technological University

This letter presents a novel technology for the integration of gallium nitride (GaN) power devices with silicon control circuits. It comprises stacked GaN power transistors and bipolar-CMOS-double-diffused metal-oxide-semiconductor (DMOS) (BCD) circuits. It leverages on both advantages of the high-voltage low-loss GaN devices and the high-integration BCD circuits. Using conventional manufacturing, packaging, and assembly techniques and equipment, the proposed technology is technology transferrable and applicable for commercial power electronic applications. To validate the concept, a 3.3-70 V dc-dc boost converter is designed, implemented, and verified experimentally. It features a conversion efficiency of 70.3%, output power of 1.68 W, and compact size of 0.32 × 0.18 cm 2.